BUH715 high voltage fastswitching npn power transistor sgs-thomson preferred salestype high voltage capability u.l. recognised isowatt218 package (u.l. file # e81734 (n)) applications: horizontal deflection for monitors switch mode power supplies description the BUH715 is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. . internal schematic diagram october 1995 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v v ebo emitter-base voltage (i c =0) 10 v i c collector current 10 a i cm collector peak current (t p <5ms) 20 a i b base current 5 a i bm base peak current (t p <5ms) 10 a p tot total dissipation at t c =25 o c57w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 isowatt218 1/7
thermal data r thj-case thermal resistance junction-case max 2.2 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce = 1500 v v ce = 1500 v t j = 125 o c 1 2 ma ma i ebo emitter cut-off current (i c =0) v eb = 5 v 100 m a v ceo(sus) collector-emitter sustaining voltage i c =100ma 700 v v ebo emitter-base voltage (i c =0) i e =10ma 10 v v ce(sat) * collector-emitter saturation voltage i c =7a i b = 1.5 a 1.5 v v be(sat) * base-emitter saturation voltage i c =7a i b = 1.5 a 1.3 v h fe * dc current gain i c =7a v ce =5v i c =7a v ce =5v t j =100 o c 8 5 16 t s t f resistive load storage time fall time v cc =400v i c =7a i b1 =1.5a i b2 =3.5a 2.1 140 3.1 210 m s ns t s t f inductive load storage time fall time i c = 7 a f = 15625 hz i b1 =1.5a i b2 =-3.5a v ceflyback =1050sin ? ? ? p 10 10 6 ? ? ? tv 3.5 350 m s ns t s t f inductive load storage time fall time i c = 7 a f = 31250 hz i b1 =1.5a i b2 =-3.5a v ceflyback =1200sin ? ? ? p 5 10 6 ? ? ? tv 3.5 320 m s ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area thermal impedance BUH715 2/7
derating curve collector emitter saturation voltage power losses at 16 khz dc current gain base emitter saturation voltage switching time inductive load at 16khz (see figure 2) BUH715 3/7
power losses at 32 khz switching time inductive load at 32 khz (see figure 2) base drive information reverse biased soa in order to saturate the power switch and reduce conduction losses, adequate direct base current i b1 has to be provided for the lowest gain h fe at 100 o c (line scan phase). on the other hand, negative base current i b2 must be provided to turn off the power transistor (retrace phase). most of the dissipation, in the deflection application, occurs at switch-off. therefore it is essential to determine the value of i b2 which minimizes power losses, fall time t f and, consequently, t j . a new set of curves have been defined to give total power losses, t s and t f as a function of i b2 at both 16 khz, 32 khz and 64khz scanning frequencies for choosing the optimum negative drive. the test circuit is illustrated in figure 1. inductance l 1 serves to control the slope of the negative base current i b2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. the values of l and c are calculated from the following equations: 1 2 l ( i c ) 2 = 1 2 c ( v cefly ) 2 w= 2 p f = 1 ``` ` l c where i c = operating collector current, v cefly = flyback voltage, f= frequency of oscillation during retrace. BUH715 4/7
figure 1: inductive load switching test circuits. figure 2: switching waveforms in a deflection circuit BUH715 5/7
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.45 1 0.017 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 isowatt218 mechanical data p025c BUH715 6/7
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersede s and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . BUH715 7/7
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